The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Dec. 11, 2012
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Feng-Ming Lee, Hsinchu, TW;

Yu-Yu Lin, New Taipei, TW;

Ming-Hsiu Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 29/788 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0408 (2013.01); H01L 29/788 (2013.01); H01L 21/28273 (2013.01);
Abstract

A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a doped region and a stack structure. The doped region is in the substrate. The stack structure is on the substrate. The stack structure comprises a dielectric layer, an electrode layer, a solid electrolyte layer and an ion supplying layer.


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