Hubei, China

Feng Lu



Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Wuhan, CN (2020)
  • Hubei, CN (2020 - 2022)

Company Filing History:


Years Active: 2020-2022

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4 patents (USPTO):Explore Patents

Title: The Innovations of Feng Lu: A Pioneer in Memory Technology

Introduction

Feng Lu, an accomplished inventor based in Hubei, China, has made significant advancements in the field of memory technology with a total of four patents to his name. His work reflects a commitment to pushing the boundaries of innovation, particularly in the areas of three-dimensional NAND memory and energy optimization in cloud computing.

Latest Patents

Feng Lu's most recent patents include a revolutionary method for creating dual deck three-dimensional NAND memory with channel dips. This innovative technique involves forming an alternating dielectric stack on a substrate and strategically placing channel holes to enhance memory device efficiency. The process entails various stages, including the use of masks to protect certain areas during fabrication, ultimately leading to an improved memory structure.

Another noteworthy patent from Lu is focused on cloudlet-based optimization of energy consumption. This method involves constructing a cloudlet system that connects multiple cloudlets to mobile devices, enabling them to receive cloud computing services. The system analyzes data from the mobile device to determine an optimal operating frequency for its processor while ensuring tasks are completed within a tolerable latency range, all while minimizing energy usage.

Career Highlights

Throughout his career, Feng Lu has contributed his expertise to notable organizations, including Yangtze Memory Technologies Co., Ltd. and Huazhong University of Science and Technology. His roles in these institutions have allowed him to influence the development of cutting-edge memory technology and cloud computing solutions significantly.

Collaborations

Feng Lu has worked alongside skilled colleagues such as Li Hong Xiao and Enbo Wang, exchanging knowledge and fostering innovation within his field. These collaborations have led to the successful development of impactful technologies that continue to shape the memory and cloud computing landscapes.

Conclusion

Feng Lu stands out as a prominent figure in the field of innovation, particularly in memory technology and energy optimization. His patents reflect a profound understanding of the complexities of modern technology and a determination to drive efficiency and performance to new heights. As he continues to develop novel methods and contribute to his field, the impact of his work is sure to resonate for years to come.

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