Yangtze Memory Technologies Co., Ltd.

Huazhong University of Science and Technology

Feng Lu

Li Hong Xiao

Enbo Wang

Hai Jin

Haohao Yang

Wenbin Zhou

Song Wu

Zhaosong Li

Jing Gao

Qianbing Xu

Sha Sha Liu

Qianbin Xu

Shasha Liu

Lihong Xiao

Ziqian Shi

Ruoxue Liu

A method for forming a three-dimensional (3D) memory device is disclosed. In some embodiments, the method includes forming an alternating dielectric stack on a substrate, and forming a plurality of channel holes penetrating the alternating dielectric stack vertically to expose at least a portion of the substrate. A first mask can be formed to cover the channel holes in a first area and expose the channel holes in a second area. The method also includes forming a recess in the alternating dielectric stack in the second area, followed by forming a second mask in the recess. The second mask covers the channel holes in the second area and exposes the channel holes in the first area. The memory film at bottom of each channel hole in the first area can therefore be removed, while the memory film in the second area can be protected by the second mask.

Dual deck three-dimensional NAND memory with channel dips and method for forming the same

The present invention relates to a method for cloudlet-based optimization of energy consumption, comprises: building a cloudlet system that comprises: at least two cloudlets and a mobile device wirelessly connected to the cloudlets, so that the cloudlets provide the mobile device wirelessly connected thereto with cloud computing services; acquiring system data related to the mobile device from the cloudlet system for analyzing a data volume to be handled by the mobile device locally and setting an initial operating frequency Ffor a first processor of the mobile device according to the data volume; and based on a tolerable latency range T of a task queue, dynamically deciding a scheduling strategy for individual task of the task queue using a Markov Decision Process, and setting a present operating frequency Ffor the first processor of the mobile device corresponding to the scheduling strategy, so as to enable the mobile device to complete the tasks within the tolerable latency range T with minimal energy consumption.

Method for cloudlet-based optimization of energy consumption

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, and a semiconductor layer above the memory stack. The channel structure includes a channel plug in a lower portion of the channel structure, a memory film along a sidewall of the channel structure, and a semiconductor channel over the memory film and in contact with the channel plug. The semiconductor layer includes a semiconductor plug above and in contact with the semiconductor channel.

Three-dimensional memory device having semiconductor plug formed using backside substrate thinning

Aspects of the disclosure provide a method for manufacturing a semiconductor device. A first structure of first stacked insulating layers including a first via over a contact region is formed. A second structure is formed by filling at least a top region of the first via with a sacrificial layer. A third structure including the second structure and second stacked insulating layers stacked above the second structure is formed. The third structure further includes a second via aligned with the first via and extending through the second stacked insulating layers. A fourth structure is formed by removing the sacrificial layer to form an extended via including the first via and the second via. A plurality of weights associated with the first structure, the second structure, the third structure, and the fourth structure is determined, and a quality of the extended via is determined based on the plurality of weights.

Methods of semiconductor device fabrication

Growing community of inventors

Hubei, China

Feng Lu