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For the Inventor, By the Inventor

Hockessin, DE, United States of America

Feng Gao

This inventor holds 14 USPTO granted patents and 4 published patent applications and 4 EPO patents. Top assignees: E.i. Dupont De Nemours and Company, Hercules Corporation. Active years: 2008-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng Gao. Retrieved from https://idiyas.com/inventor/feng-gao-jzroqvpc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 21.4

 

Average Co-Inventor Count = 7.5

ph-index = 4

Forward Citations = 38(Granted Patents)


Location History:

  • Wilmington, DE (US) (2008)
  • Hockessin, DE (US) (2009 - 2017)

Company Filing History:

goldMedal13 out of 16,339 
 
E.i. Dupont De Nemours and Company
 patents
silverMedal1 out of 1,204 
 
Hercules Corporation
 patents

Years Active: 2008-2017

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14 patents (USPTO):Explore Patents
1. 9559361 - Modified guaran binder for lithium ion batteries and methods for producing the same (2017-01-31),
2. 8741167 - Etching composition and its use in a method of making a photovoltaic cell (2014-06-03),
3. 8440383 - Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom (2013-05-14),
4. 8377622 - Thermally imageable dielectric layers, thermal transfer donors and receivers (2013-02-19),
5. 8308886 - Donor elements and processes for thermal transfer of nanoparticle layers (2012-11-13),
6. 8062824 - Thermally imageable dielectric layers, thermal transfer donors and receivers (2011-11-22),
7. 8053840 - Thin film transistor comprising novel conductor and dielectric compositions (2011-11-08),
8. 7901596 - Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom (2011-03-08),
9. 7744717 - Process for enhancing the resolution of a thermally transferred pattern (2010-06-29),
10. 7666568 - Composition and method for providing a patterned metal layer having high conductivity (2010-02-23),
11. 7666567 - Negative imaging method for providing a patterned metal layer having high conductivity (2010-02-23),
12. 7582403 - Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom (2009-09-01),
13. 7528448 - Thin film transistor comprising novel conductor and dielectric compositions (2009-05-05),
14. 7351357 - Printing of organic conductive polymers containing additives (2008-04-01),

Title: The Innovative Journey of Inventor Feng Gao

Introduction: Feng Gao, a talented inventor hailing from Hockessin, DE (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Feng Gao's latest patents include a cutting-edge wearable technology device that revolutionizes the healthcare industry, a smart home automation system for enhanced convenience, and a sustainable energy solution for eco-friendly living.

Career Highlights: With a career spanning over two decades, Feng Gao has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions. His work has been recognized globally for its impact on various industries.

Collaborations: Feng Gao has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of technological innovation and driving positive change in society.

Conclusion: In conclusion, Feng Gao's passion for innovation, coupled with his relentless drive to create meaningful solutions, has solidified his position as a respected inventor in the technology sector. His contributions continue to inspire future generations of inventors to think outside the box and push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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