The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Mar. 13, 2009
Richard Kevin Bailey, Newark, DE (US);
Graciela Beatriz Blanchet, Wilmington, DE (US);
John W. Catron, Jr., Smyrna, DE (US);
Reid John Chesterfield, Santa Barbara, CA (US);
Marc B. Goldfinger, West Chester, PA (US);
Gary Delmar Jaycox, West Chester, PA (US);
Lynda Kaye Johnson, Wilmington, DE (US);
Irina Malajovich, Swarthmore, PA (US);
Hong Meng, Wilmington, DE (US);
Jeffrey Scott Meth, Landenberg, PA (US);
Kenneth George Sharp, Landenberg, PA (US);
Rinaldo Soria Schiffino, Wilmington, DE (US);
Feng Gao, Hockessin, DE (US);
Gerald Donald Andrews, Hockessin, DE (US);
Richard Kevin Bailey, Newark, DE (US);
Graciela Beatriz Blanchet, Wilmington, DE (US);
John W. Catron, Jr., Smyrna, DE (US);
Reid John Chesterfield, Santa Barbara, CA (US);
Marc B. Goldfinger, West Chester, PA (US);
Gary Delmar Jaycox, West Chester, PA (US);
Lynda Kaye Johnson, Wilmington, DE (US);
Irina Malajovich, Swarthmore, PA (US);
Hong Meng, Wilmington, DE (US);
Jeffrey Scott Meth, Landenberg, PA (US);
Kenneth George Sharp, Landenberg, PA (US);
Rinaldo Soria Schiffino, Wilmington, DE (US);
Feng Gao, Hockessin, DE (US);
Gerald Donald Andrews, Hockessin, DE (US);
E. I. du Pont de Nemours and Company, Wilmington, DE (US);
Abstract
The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.