Faraz Khan

Title: Faraz Khan: Innovator in Semiconductor Memory Technology

Introduction

Faraz Khan is a notable inventor based in Los Angeles, CA. He has made significant contributions to the field of semiconductor memory technology, holding 2 patents that showcase his innovative approach to memory devices.

Latest Patents

His latest patents include advancements in charge trap memory devices. The first patent focuses on semiconductor structures, particularly charge trap memory devices and methods of manufacture and operation. This semiconductor memory features a charge trap transistor with a gate structure, a source region, and a drain region. It also includes a self-heating circuit that selectively applies an alternating bias direction between the source and drain regions to facilitate erase and programming operations of the charge trap transistor. The second patent pertains to program and erase memory structures, which also utilize a charge trap transistor and a self-heating circuit to assist in erase operations.

Career Highlights

Faraz Khan has worked with prominent companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in memory devices.

Collaborations

Throughout his career, Faraz has collaborated with esteemed colleagues such as Norman Whitelaw Robson and Toshiaki Kirihata. These collaborations have further enriched his work and innovation in the field.

Conclusion

Faraz Khan's contributions to semiconductor memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of advanced memory devices in the industry.