Beaverton, OR, United States of America

Fanling Hsu Yang


Average Co-Inventor Count = 5.5

ph-index = 5

Forward Citations = 94(Granted Patents)


Company Filing History:


Years Active: 2001-2017

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7 patents (USPTO):Explore Patents

Title: The Innovations of Fanling Hsu Yang

Introduction

Fanling Hsu Yang is a prominent inventor based in Beaverton, Oregon. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Vertical semiconductor device having frontside interconnections." This invention involves a semiconductor device that includes a vertical diffused metal-oxide-semiconductor (VDMOS) device. The design features a terminal to the drain region from the frontside, allowing for improved electrical interconnections. Another notable patent is "LDMOS with field plate connected to gate." This patent describes laterally diffused metal oxide semiconductor (LDMOS) devices that incorporate a field plate connected to the gate, enhancing the electrical field between the source and drain regions.

Career Highlights

Fanling Hsu Yang is currently employed at Maxim Integrated Products, Inc., where he continues to innovate in semiconductor technology. His expertise in the field has led to advancements that benefit various applications in electronics.

Collaborations

Throughout his career, Fanling has collaborated with notable colleagues, including Alexander Kalnitsky and Robert F. Scheer. These partnerships have contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Fanling Hsu Yang's contributions to semiconductor innovation are noteworthy, with several patents that enhance device performance. His work continues to influence the industry and drive technological advancements.

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