The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Aug. 05, 2011
David Harper, Battle Ground, WA (US);
Sudarsan Uppili, Portland, OR (US);
Fanling Hsu Yang, Beaverton, OR (US);
David L. Snyder, Beaverton, OR (US);
Christopher S. Blair, Lake Oswego, OR (US);
Guillaume Bouche, Beaverton, OR (US);
David Harper, Battle Ground, WA (US);
Sudarsan Uppili, Portland, OR (US);
Fanling Hsu Yang, Beaverton, OR (US);
David L. Snyder, Beaverton, OR (US);
Christopher S. Blair, Lake Oswego, OR (US);
Guillaume Bouche, Beaverton, OR (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
A semiconductor device is described that includes a first electrical circuit and a second electrical circuit formed on a semiconductor on insulator wafer. The semiconductor on insulator wafer has a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material. A wide deep trench is formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit. The first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits.