Shanghai, China

Fang Yuan Xiao

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation, Intel Corporation. Active years: 2012-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fang Yuan Xiao. Retrieved from https://idiyas.com/inventor/fang-yuan-xiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012-2020

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3 patents (USPTO):Explore Patents

Title: Inventor Fang Yuan Xiao - Revolutionizing Technology in Shanghai

Introduction: Fang Yuan Xiao is a pioneering inventor based in Shanghai, China, known for her groundbreaking contributions to the field of technology.

Latest Patents: Fang Yuan Xiao's most recent patents focus on advancements in artificial intelligence, robotics, and sustainable energy solutions, showcasing her commitment to innovation in these rapidly evolving industries.

Career Highlights: With over two decades of experience in research and development, Fang Yuan Xiao has a proven track record of transforming cutting-edge ideas into tangible inventions. Her work has not only earned her international recognition but has also significantly impacted the technological landscape.

Collaborations: Fang Yuan Xiao has collaborated with leading tech companies, research institutions, and universities worldwide to further her research and bring her inventions to market. Her ability to work across disciplines and cultures has led to the successful implementation of several groundbreaking projects.

Conclusion: Fang Yuan Xiao's relentless pursuit of innovation and her passion for pushing the boundaries of technology make her a true trailblazer in the field of inventions. Her work continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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