For the Inventor, By the Inventor

Enter inventor name

Fabrizio Torricelli

USPTO Granted Patents = 5 (Patent Applications = 1)

Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 11(Granted Patents)

Location History:

Desenzano del Garda, IT (2013 - 2014)
Brescia, IT (2016 - 2019)

Company Filing History:

Stmicroelectronics S.r.l.

Years Active: 2013-2019

Loading Chart...

5 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10468425 - Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling (2019-11-05),

2. 9368209 - Embedded non-volatile memory with single polysilicon layer memory cells programmable through channel hot electrons and erasable through fowler-nordheim tunneling (2016-06-14),

3. 9361982 - Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling (2016-06-07),

4. 8873291 - Non-volatile memory device with single-polysilicon-layer memory cells (2014-10-28),

5. 8493787 - FTP memory device programmable and erasable at cell level (2013-07-23),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…