Etsuo Iijima

Title: Etsuo Iijima: Innovator in Dry-Etching Technology

Introduction

Etsuo Iijima is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in dry-etching methods. With a total of 5 patents to his name, Iijima's work has advanced the efficiency and effectiveness of etching processes in the industry.

Latest Patents

Iijima's latest patents focus on innovative dry-etching methods. One of his notable inventions involves a main etching step conducted under a first pressure using a gas containing at least HBr. This method allows for the main etching to conclude before exposing the silicon oxide film. An over-etching process follows under a higher second pressure, ensuring complete exposure of the silicon oxide film. This technique improves the selectivity of silicon-containing conductive layers compared to conventional methods. Another patent describes a dry-etching method utilizing an apparatus with opposed electrodes in an etching chamber. High-frequency power is supplied to these electrodes to achieve plasma etching, which forms trenches in silicon wafers while controlling the shape of the trench sidewalls.

Career Highlights

Etsuo Iijima is currently employed at Tokyo Electron Limited, a leading company in the semiconductor equipment industry. His work has been instrumental in developing advanced etching technologies that enhance manufacturing processes.

Collaborations

Iijima has collaborated with notable coworkers, including Norikazu Yamada and Hiroshi Tsuchiya. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Etsuo Iijima's innovative contributions to dry-etching technology have significantly impacted the semiconductor industry. His patents reflect a commitment to improving manufacturing processes and advancing technology.