The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Mar. 30, 2006
Etsuo Iijima, Nirasaki, JP;
Meiki Koh, Nirasaki, JP;
Etsuo Iijima, Nirasaki, JP;
Meiki Koh, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cland HBr. Trenchesare formed, as shown in FIG.B, in a silicon wafershown in FIG.A through a mask layer such as a nitride silicon layer. While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewallsof the trenchesis controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.