The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Dec. 16, 2008
Etsuo Iijima, Yamanashi, JP;
Norikazu Yamada, Yamanashi, JP;
Etsuo Iijima, Yamanashi, JP;
Norikazu Yamada, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A main etching step is effected in a state shown in FIG.A under a first pressure using a gas containing at least HBr, e.g., a mixture gas of HBr and Clas an etching gas. The main etching is ended before a silicon oxide film, as shown in FIG.B, is exposed. An over-etching process is effected under a second pressure higher than the first pressure using a gas containing at least HBr, e.g., an HBr single gas so as to completely expose the silicon oxide filmas shown in FIG.C. In such a way, the selectivity of a silicon-containing conductive layer with respect to the silicon oxide film is improved compared to conventional methods. Without etching the silicon oxide film layer, which is an underlying layer, and without marring the shape of the silicon-containing conductive film layer formed by etching, only the desired silicon-containing conductive film layer is removed by etching reliably.