The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Feb. 28, 2007
Applicants:
Etsuo Iijima, Nirasaki, JP;
Hiroshi Tsuchiya, Yongin, JP;
Inventors:
Etsuo Iijima, Nirasaki, JP;
Hiroshi Tsuchiya, Yongin, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05D 1/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
An RF power (Bottom RF) from a radio-frequency power sourceis turned off (t) and the supply of a He gasto a back face of a wafer W is stopped (t) when an end point detector(EPD) detects an end point (t), and a high-voltage DC power source(HV) is turned off (t) under the condition in which an RF power (Top RF) from a radio-frequency power sourceis controlled to fall within a range in which etching does not progress and plasma discharge can be maintained (t). This process enables the inhibition of the adhesion of particles while an etching amount is accurately controlled.