Eric Ooms

Title: Eric Ooms: Innovator in Semiconductor Technology

Introduction

Eric Ooms is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in the area of high voltage transistors. With a total of 2 patents to his name, Ooms continues to push the boundaries of innovation in his field.

Latest Patents

Ooms' latest patents include a method for making high voltage transistors insensitive to needle defects in shallow trench isolation. This method involves filling a trench formed in a substrate of a semiconductor device with a first oxide, which defines a shallow trench isolation (STI) and includes a defect extending from the substrate. The process includes removing the top portion of the defect and filling the trench with a second oxide, ultimately forming a field plate of a split-gate transistor over the STI. Another patent focuses on reducing defects in shallow trench isolation, which includes forming a trench with a needle defect, depositing a high-density plasma oxide, and applying an oxide etch to remove parts of the oxide over the needle defect.

Career Highlights

Eric Ooms works at NXP B.V., a company known for its innovative semiconductor solutions. His work has been instrumental in advancing the technology used in high voltage transistors, making them more reliable and efficient.

Collaborations

Ooms collaborates with talented professionals in his field, including Jerome Dubois and Piet Wessels. Their combined expertise contributes to the innovative projects at NXP B.V.

Conclusion

Eric Ooms is a prominent figure in semiconductor innovation, with a focus on enhancing the reliability of high voltage transistors. His contributions through patents and collaborations continue to shape the future of semiconductor technology.