The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Apr. 16, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Jerome Dubois, Singapore, SG;
Piet Wessels, Nijmegen, NL;
Gaurav Singh Bisht, Singapore, SG;
Jayaraj Thillaigovindan, Tamilnadu, IN;
Eric Ooms, Wijchen, NL;
Naveen Agrawal, Rajasthan, IN;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76235 (2013.01); H01L 21/30604 (2013.01); H01L 21/3212 (2013.01); H01L 21/76224 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a trench that includes a needle defect, depositing a high density plasma oxide over the trench including the needle defect, removing the part of the high density oxide and the liner oxide over the needle defect by applying an oxide etch, and after the step of applying the oxide etch, etching back the needle defect by applying a polysilicon etch.