Shanghai, China

Er Hu Zheng

This inventor holds 2 USPTO granted patents. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Er Hu Zheng. Retrieved from https://idiyas.com/inventor/er-hu-zheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020

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2 patents (USPTO):Explore Patents

Title: The Innovations of Er Hu Zheng

Introduction

Er Hu Zheng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his expertise and innovative spirit. His work has had a considerable impact on the development of advanced semiconductor devices.

Latest Patents

Er Hu Zheng's latest patents include a semiconductor structure and fabrication method. This invention provides a semiconductor device and a fabrication method that involves several intricate steps. The method includes providing a gate structure on a substrate and a first protective layer on the gate structure. It also involves forming an initial sidewall spacer on the sidewall of each gate structure and the first protective layer. Additionally, a first sidewall spacer is formed on the sidewall of the initial sidewall spacer, with both spacers made of different materials. The process continues with the formation of a second sidewall spacer by removing a portion of the initial sidewall spacer, creating a trench above the second sidewall spacer. The second protective layer is then formed in the trench, ensuring that it and the first sidewall spacer are made of the same material. The second sidewall spacer has a top surface that is higher than or level with the top surface of the gate structure.

Another notable patent by Zheng is an etching method and fabrication method of semiconductor structures. This method includes forming trenches in a to-be-etched structure and creating a dielectric layer within those trenches. The etching process involves controlling the etching temperature while a polymer is formed on the side surface of the to-be-etched structure. During this process, the polymer undergoes both a deposition stage and a removal stage, with varying rates that are crucial for the etching process.

Career Highlights

Throughout his career, Er Hu Zheng has worked with leading companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Er Hu Zheng has collaborated with notable colleagues, including Lu Jun Zou and Min Da Hu. These partnerships have fostered an environment of innovation and have led to the successful development of various semiconductor technologies.

Conclusion

Er Hu Zheng's contributions to the field of semiconductor technology are noteworthy. His patents reflect his innovative approach and dedication to advancing the industry. Through his work

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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