The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Mar. 31, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Min Da Hu, Shanghai, CN;
Er Hu Zheng, Shanghai, CN;
Cheng Long Zhang, Shanghai, CN;
Hai Yang Zhang, Shanghai, CN;
Abstract
An etching method and a fabrication method of semiconductor structures are provided. The etching method includes forming trenches in a to-be-etched structure, and forming a dielectric layer in the trenches. The etching method further includes etching the dielectric layer in the trenches by an etching process, and controlling at least an etching temperature of the etching process while a polymer is formed on side surface of the to-be-etched structure. During the etching process of the dielectric layer, the polymer undergoes a deposition stage and a removal stage. The deposition stage has a deposition rate of the polymer greater than an etch rate of the polymer, and the removal stage has the deposition rate of the polymer less than the etch rate of the polymer.