Emi Kanazaki

Title: Emi Kanazaki: Semiconductor Device Inventor

Introduction

Emi Kanazaki is a woman inventor associated with Toyama, Japan. Her patent work focuses on semiconductor devices and methods for fabricating electronic components. She is credited with 4 patents.

Latest Patents

Kanazaki’s listed patents include “Integrated Circuit and Method of Manufacturing the Same.” The invention describes an integrated circuit with enhancement-mode and depletion-mode MOS transistors formed in a semiconductor well region. In at least one depletion-mode transistor, an implanted region adjusts the channel’s threshold voltage.

Another listed patent is “Method for Fabricating Electronic Device.” It describes setting ion implantation or heat-treatment conditions for forming a transistor’s drain extension structure. The process uses a previously established relationship between gate-electrode size and fabrication conditions to help achieve a specified threshold voltage.

Career Highlights

Kanazaki’s professional affiliations include Matsushita Electric Industrial Co., Ltd., now known as Panasonic Corporation, and Panasonic Corporation. Her work reflects a focus on transistor structures, integrated circuits, and semiconductor manufacturing processes.

Collaborations

Her listed coworkers include Satoshi Shibata and Fumitoshi Kawase, reflecting professional connections in semiconductor research and development.

Conclusion

Emi Kanazaki’s patent portfolio highlights contributions to integrated-circuit design and electronic-device fabrication, particularly in transistor threshold-voltage control and manufacturing processes.