Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Emi Kanazaki

Satoshi Shibata

Fumitoshi Kawase

Hisako Kamiyanagi

Mikiya Uchida

Chinatsu Seto

Kenichi Mimuro

An integrated circuit includes: a semiconductor substrate that has a well region containing a first conductivity type impurity; and an enhancement type MOS transistor and a plurality of depletion type MOS transistors, each of which is formed in the well region and has a channel region under a gate electrode. At least one of the depletion type MOS transistors has, in the channel region, an implantation region into which a second conductivity type impurity is implanted so that a threshold voltage is adjusted. The implantation region has the first conductivity type impurity and the second conductivity type impurity. Further, the second conductivity type impurity has a concentration that is higher than a concentration of the first conductivity type impurity.

Integrated circuit and method of manufacturing the same

In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extension structure is previously obtained. This correspondence satisfies that the transistor has a given threshold voltage. After formation of the gate electrode and measurement of the size of the gate electrode, ion implantation conditions or heat treatment conditions for forming the drain extension structure are set based on the previously-obtained correspondence and the measured size of the gate electrode. Ion implantation or heat treatment for forming the drain extension structure is performed under the ion implantation conditions or heat treatment conditions that have been set.

Method for fabricating electronic device

A light irradiation heat treatment apparatus and method may use a plane-shaped light irradiation heating component, facing one surface of a workpiece supported in a furnace, to raise the temperature of the workpiece. The temperature of the workpiece is raised by setting an intensity distribution for light irradiated from the light irradiation heating component in accordance with the resistivity of the workpiece. Thereafter, the workpiece is irradiated with light having the set light intensity distribution to raise its temperature.

Light irradiation heat treatment method and light irradiation heat treatment apparatus

Growing community of inventors

Toyama, Japan

Emi Kanazaki