The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Nov. 21, 2006
Chinatsu Seto, Toyama, JP;
Mikiya Uchida, Kyoto, JP;
Kenichi Mimuro, Toyama, JP;
Emi Kanazaki, Toyama, JP;
Chinatsu Seto, Toyama, JP;
Mikiya Uchida, Kyoto, JP;
Kenichi Mimuro, Toyama, JP;
Emi Kanazaki, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An integrated circuit includes: a semiconductor substrate that has a well region containing a first conductivity type impurity; and an enhancement type MOS transistor and a plurality of depletion type MOS transistors, each of which is formed in the well region and has a channel region under a gate electrode. At least one of the depletion type MOS transistors has, in the channel region, an implantation region into which a second conductivity type impurity is implanted so that a threshold voltage is adjusted. The implantation region has the first conductivity type impurity and the second conductivity type impurity. Further, the second conductivity type impurity has a concentration that is higher than a concentration of the first conductivity type impurity.