The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
Oct. 26, 2006
Satoshi Shibata, Toyama, JP;
Fumitoshi Kawase, Toyama, JP;
Hisako Kamiyanagi, Toyama, JP;
Emi Kanazaki, Toyama, JP;
Satoshi Shibata, Toyama, JP;
Fumitoshi Kawase, Toyama, JP;
Hisako Kamiyanagi, Toyama, JP;
Emi Kanazaki, Toyama, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extension structure is previously obtained. This correspondence satisfies that the transistor has a given threshold voltage. After formation of the gate electrode and measurement of the size of the gate electrode, ion implantation conditions or heat treatment conditions for forming the drain extension structure are set based on the previously-obtained correspondence and the measured size of the gate electrode. Ion implantation or heat treatment for forming the drain extension structure is performed under the ion implantation conditions or heat treatment conditions that have been set.