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Yokohama, Japan

Eisuke Nishitani

USPTO Granted Patents = 10

Average Co-Inventor Count = 7.0

ph-index = 8

Forward Citations = 683(Granted Patents)

Location History:

Yokohama, JP (1989 - 2005)
Yokahama, JP (2005)

Company Filing History:

10 out of 42,485

Years Active: 1989-2005

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6905928 - MOS transistor apparatus and method of manufacturing same (2005-06-14),

2. 6870224 - MOS transistor apparatus and method of manufacturing same (2005-03-22),

3. 6171641 - Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus (2001-01-09),

4. 5815396 - Vacuum processing device and film forming device and method using same (1998-09-29),

5. 5707500 - Vacuum processing equipment, film coating equipment and deposition method (1998-01-13),

6. 5670421 - Process for forming multilayer wiring (1997-09-23),

7. 5574247 - CVD reactor apparatus (1996-11-12),

8. 5498768 - Process for forming multilayer wiring (1996-03-12),

9. 4979466 - Apparatus for selective deposition of metal thin film (1990-12-25),

10. 4830891 - Method for selective deposition of metal thin film (1989-05-16),

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