Yokohama, Japan

Eisuke Nishitani

This inventor holds 10 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 1989-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eisuke Nishitani. Retrieved from https://idiyas.com/inventor/eisuke-nishitani-b15d25nu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 7.0

ph-index = 8

Forward Citations = 694(Granted Patents)


Location History:

  • Yokohama, JP (1989 - 2005)
  • Yokahama, JP (2005)

Company Filing History:


Years Active: 1989-2005

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10 patents (USPTO):Explore Patents

Title: The Innovations of Eisuke Nishitani

Introduction

Eisuke Nishitani is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS transistor apparatuses. With a total of 10 patents to his name, Nishitani's work has had a considerable impact on the industry.

Latest Patents

One of his latest patents focuses on a MOS transistor apparatus and the method of manufacturing it. This invention addresses the challenges associated with using polycrystalline silicon germanium films for gate electrodes in MOS transistor apparatuses. The reliability of the gate insulating film has been a concern due to stress in the silicon germanium grains. To overcome this issue, Nishitani's method involves forming a polysilicon germanium film after creating silicon fine particles of particle size 10 nm or less on an oxide film. This innovative approach allows for the creation of a high-speed MOS transistor apparatus that utilizes an ultra-thin oxide film with a thickness of 1.5 nm or less. The uniform Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film reduces stress in the film, thereby enhancing the reliability of the gate electrode.

Career Highlights

Eisuke Nishitani has had a distinguished career at Hitachi, Ltd., where he has been instrumental in advancing semiconductor technologies. His expertise and innovative mindset have led to numerous breakthroughs in the field, solidifying his reputation as a leading inventor.

Collaborations

Throughout his career, Nishitani has collaborated with notable colleagues, including Shigeru Kobayashi and Susumu Tsuzuku. These partnerships have fostered a collaborative environment that has contributed to the success of his inventions.

Conclusion

Eisuke Nishitani's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative approaches to MOS transistor apparatuses demonstrate his commitment to enhancing the reliability and performance of electronic devices. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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