The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2001

Filed:

Jun. 15, 1994
Applicant:
Inventors:

Akira Okamoto, Chigasaki, JP;

Shigeru Kobayashi, Hiratsuka, JP;

Hideaki Shimamura, Yokohama, JP;

Susumu Tsuzuku, Tokyo, JP;

Eisuke Nishitani, Yokohama, JP;

Satosi Kisimoto, Yokohama, JP;

Yuji Yoneoka, Yokohama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/646 ; C23C 1/454 ;
U.S. Cl.
CPC ...
C23C 1/646 ; C23C 1/454 ;
Abstract

A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.


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