Company Filing History:

6 out of 164,108

International Business Machines Corporation

where one patent can have more than one assignee

Years Active: 2003-2017

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9711365 - Etch rate enhancement for a silicon etch process through etch chamber pretreatment (2017-07-18),

2. 8928124 - High aspect ratio and reduced undercut trench etch process for a semiconductor substrate (2015-01-06),

3. 8652969 - High aspect ratio and reduced undercut trench etch process for a semiconductor substrate (2014-02-18),

4. 7820552 - Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack (2010-10-26),

5. 6743686 - Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication (2004-06-01),

6. 6518136 - Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication (2003-02-11),

Title: **Edmund M Sikorski: A Pioneer in Silicon Etching Innovations**

Introduction

Edmund M Sikorski is an accomplished inventor based in Florida, NY, with an impressive portfolio of six patents. His contributions to the field of semiconductor technology, particularly in silicon etching processes, highlight his innovative approach and dedication to advancing industry standards.

Latest Patents

Among his notable patents, Sikorski's work on "Etch rate enhancement for a silicon etch process through etch chamber pretreatment" stands out. This patented method significantly improves the etch rate of silicon by at least 50% through strategic pretreatment of the etch chamber, enhancing process efficiency without adversely affecting the etch profiles. His second recent patent, "High aspect ratio and reduced undercut trench etch process for a semiconductor substrate," utilizes hydrofluorocarbon gas as a polymer deposition agent. This innovative approach allows for the etching of deep trenches in semiconductor substrates while minimizing trench undercut and maintaining a high overall etch rate.

Career Highlights

Throughout his career, Sikorski has worked with prestigious companies such as IBM and Zeon Corporation. His roles in these organizations provided him with the platform to develop and refine his cutting-edge inventions in semiconductor processing.

Collaborations

Sikorski has collaborated with talented individuals, including Ying Di Zhang and Eric Andrew Joseph. Their combined expertise has further enhanced the innovative solutions developed in their respective projects, empowering advancements in the semiconductor industry.

Conclusion

Edmund M Sikorski's contributions to silicon etching technologies have made a significant impact on the field of semiconductor manufacturing. His innovative patents not only exemplify his technical expertise but also reflect his commitment to improving efficiency and performance in etching processes. As technology continues to evolve, Sikorski's work will undoubtedly pave the way for future advancements.

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