The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Oct. 26, 2011
Nicholas C. M. Fuller, North Hills, NY (US);
Eric A. Joseph, White Plains, NY (US);
Edmund M. Sikorski, Florida, NY (US);
Goh Matsuura, Hartsdale, NY (US);
Nicholas C. M. Fuller, North Hills, NY (US);
Eric A. Joseph, White Plains, NY (US);
Edmund M. Sikorski, Florida, NY (US);
Goh Matsuura, Hartsdale, NY (US);
International Business Machines Corporation, Armonk, NY (US);
ZEON Corporation, Tokyo, JP;
Abstract
A hydrofluorocarbon gas is employed as a polymer deposition gas in an anisotropic etch process employing an alternation of an etchant gas and the polymer deposition gas to etch a deep trench in a semiconductor substrate. The hydrofluorocarbon gas can generate a thick carbon-rich and hydrogen-containing polymer on sidewalls of a trench at a thickness on par with the thickness of the polymer on a top surface of the semiconductor substrate. The thick carbon-rich and hydrogen-containing polymer protects sidewalls of a trench, thereby minimizing an undercut below a hard mask without degradation of the overall rate. In some embodiments, an improvement in the overall etch rate can be achieved.