The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Mar. 13, 2007
Siva Kanakasabapathy, Hopewell Junction, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Edmund M. Sikorski, Florida, NY (US);
Hongwen Yan, Somers, NY (US);
Vijay Narayanan, New York, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Bruce B. Doris, Brewster, NY (US);
Siva Kanakasabapathy, Hopewell Junction, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Edmund M. Sikorski, Florida, NY (US);
Hongwen Yan, Somers, NY (US);
Vijay Narayanan, New York, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Bruce B. Doris, Brewster, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An advanced method of patterning a gate stack including a high-k gate dielectric that is capped with a high-k gate dielectric capping layer such as, for example, a rare earth metal (or rare earth like)-containing layer is provided. In particular, the present invention provides a method in which a combination of wet and dry etching is used in patterning such gate stacks which substantially reduces the amount of remnant high-k gate dielectric capping material remaining on the surface of a semiconductor substrate to a value that is less than 10atoms/cm, preferably less than about 10atoms/cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile