The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
May. 02, 2014
International Business Machines Corporation, Armonk, NY (US);
Zeon Corporation, Tokyo, JP;
Eric A. Joseph, White Plains, NY (US);
Goh Matsuura, Hartsdale, NY (US);
Masahiro Nakamura, Eastchester, NY (US);
Edmund M. Sikorski, Florida, NY (US);
Bang N. To, Yorktown Heights, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
ZEON CORPORATION, Tokyo, JP;
Abstract
Pretreatment of an etch chamber for performing a silicon etch process and Bosch process can be effected by running a deposition process employing CHF, or by running an alternating deposition and etch process employing CHFand SF. It has been discovered that the pretreatment of the etch chamber for the silicon etch process can enhance the etch rate of silicon by at least 50% without adverse effect on etch profile during a first each process following the pretreatment, while the etch rate enhancement factor decreases over time. By periodically performing the pretreatment in the etch chamber, the throughput of the etch chamber can be increased without adversely impacting the etch profile of the processed substrates.