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For the Inventor, By the Inventor

Pullach, Germany

Eberhard F Krimmel

This inventor holds 9 USPTO granted patents. Top assignee: Siemens Aktiengesellschaft. Active years: 1976-1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eberhard F Krimmel. Retrieved from https://idiyas.com/inventor/eberhard-f-krimmel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 7

Forward Citations = 94(Granted Patents)


Company Filing History:

goldMedal9 out of 30,886 
 
Siemens Aktiengesellschaft
 patents

Years Active: 1976-1988

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9 patents (USPTO):Explore Patents
1. 4784963 - Method for light-induced photolytic deposition simultaneously (1988-11-15),
2. 4596998 - Display with a number of light-emitting semiconductor components (1986-06-24),
3. 4359486 - Method of producing alloyed metal contact layers on crystal-orientated (1982-11-16),
4. 4209704 - Tandem ion acceleration having a matter-free ion charge reversed zone (1980-06-24),
5. 4208668 - Charge coupled device with buried zones in a semiconductor substrate for (1980-06-17),
6. 4140546 - Method of producing a monocrystalline layer on a substrate (1979-02-20),
7. 4137457 - Method of producing implanted areas in a substrate (1979-01-30),
8. 4133702 - Method of producing structured layers on a substrate being irradiated (1979-01-09),
9. 3970854 - High speed ion beam switching arrangement for use in the production of (1976-07-20),

Title: Eberhard F Krimmel: Innovator in Semiconductor Technology

Introduction

Eberhard F Krimmel is a notable inventor based in Pullach, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on innovative methods for manufacturing semiconductor components, particularly through light-induced processes.

Latest Patents

One of Krimmel's latest patents is a method for light-induced photolytic deposition. This technique allows for the simultaneous manufacturing of semiconductor components with multiple layers. The method enables the production of periodically alternating layers and doping patterns, which can be deposited simultaneously. This innovation also addresses the issue of radiation damage typically associated with implantation. Another significant patent involves a display featuring light-emitting semiconductor components, such as luminescent diodes. This display is designed to minimize optical cross-talk and is constructed on a substrate with self-adjusting area portions left as counter electrodes.

Career Highlights

Eberhard F Krimmel is associated with Siemens Aktiengesellschaft, a leading company in the technology sector. His work at Siemens has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Krimmel has collaborated with notable colleagues, including Hubert Patalong and Adolf G Lutsch. These collaborations have further enriched his work and led to innovative solutions in semiconductor manufacturing.

Conclusion

Eberhard F Krimmel's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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