Siemens Aktiengesellschaft

Eberhard F Krimmel

Hubert Patalong

Hartmut Runge

Hartmut Boroffka

Adolf G Lutsch

Semiconductor components which have a plurality of layers lying on top of one another are manufactured with the assistance of a method for light-induced, photolytic deposition. Particularly, periodically alternating layers (hyperfine structure elements) and/or doping patterns are produced simultaneously with deposition of layers and/or with randomly selected doping gradients. In particular, the method is also suited for simultaneous deposition of layers lying laterally side-by-side or of laterally side-by-side differing dopings of a layer being deposited. In the context of doping, the radiation damage known from implantation is avoided.

Method for light-induced photolytic deposition simultaneously

A display with a number of light-emitting semiconductor components such as a luminescent diode has as low as possible an optical cross-talk. It is constructed on a substrate on the rear side of which self-adjusting area portions of an original entire-area metallization have been left as counter electrodes. Material of the substrate bordering on the rear side in the intervals between the counter electrodes is made greatly absorbing or poorly reflecting, preferably through conversion into an amorphous state.

Display with a number of light-emitting semiconductor components

A region of a semiconductor surface intended for a metal contact is scanned with a closely packed sequence of intense laser light pulses so as to generate a disturbed surface layer and a metal layer is then applied and alloyed into the semiconductor surface. The invention is particularly useful with silicon crystal surfaces orientated in the &lt;100&gt; direction, which for the manufacture of semiconductor components, such as thyristors having controllable short-circuits generated by integrated field effect transistors, are provided on their back side with an aluminum contact or a metal silicide contact.

Method of producing alloyed metal contact layers on crystal-orientated

A tandem ion accelerator is disclosed having a charge reversing device for recharging negative ions into positive ions. The recharging is carried out in a matter-free zone and a light source is provided having a high luminous density for recharging the negative ions into positive ions. Preferably a deflecting device is provided for displacing an ion path and the light source is arranged such that a path of the light emitted from the light source coincides at least with a portion of the ion path.

Tandem ion acceleration having a matter-free ion charge reversed zone

A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate and located in a plane spaced below a surface of the substrate. The rear edge of each electrode is in line with the front edge of a buried doped zone. The front edge of the same electrode overlaps the rear end of the next succeeding buried doped zone. The upper front corner of each electrode is bevelled.

Charge coupled device with buried zones in a semiconductor substrate for

A monocrystalline layer is vapor-deposited on a substrate surface while substantially simultaneously such surface is irradiated with an ion beam having ions with a kinetic energy of at least 10 keV. The resultant ion current impinging on the substrate surface is controlled in such a manner that the sum of the vaporization rate and sputtering rate caused by such ions is smaller than the combined condensation rate of such ions and vaporized particles.

Method of producing a monocrystalline layer on a substrate

Implanted areas are produced on a substrate by irradiating the surface of the substrate with two coherent high kinetic energy beams which are superimposed in relation to one another and spaced from the substrate surface in such a manner that maxima and/or minima of an interference pattern formed by the two particle streams are located on the substrate surface.

Method of producing implanted areas in a substrate

A monocrystalline layer having select structures therein is deposited on a substrate surface from a gas phase or via a molecular beam while the substrate surface is being irradiated with two coherent particle beams superimposed in relation to one another. The coherent particle beams are comprised of particles having an energy of about 10 keV and the substrate is positioned relative to the particle beams so that a maxima of an interference pattern formed by such particle beams is located on the substrate surface.

Method of producing structured layers on a substrate being irradiated

An arrangement for high speed ion beam switching in the production of determinate implantation doses for the doping, by ion implantation, in solid bodies, in which an electrode, preferably a diaphragm is interposed in the path of an ion beam from an ion source, and to which a potential is intermittently connected and disconnected in a controlled manner, to produce a potential wall which is disposed in the beam path of the ions, which has a value exceeding the kinetic energy of the ions, whereby the latter cannot pass therethrough.

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Pullach, Germany

Eberhard F Krimmel