The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 1988

Filed:

May. 11, 1987
Applicant:
Inventors:

Eberhard F Krimmel, Pullach, DE;

Adolf G Lutsch, Johannesburg, ZA;

Assignee:

Siemens Aktiengesellschaft, Berlin and Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 19 ; 148D / ; 20415715 ; 427 531 ; 427 541 ; 427 55 ; 427 561 ; 437 88 ; 437108 ; 437160 ; 437173 ; 437929 ; 437942 ; 437963 ;
Abstract

Semiconductor components which have a plurality of layers lying on top of one another are manufactured with the assistance of a method for light-induced, photolytic deposition. Particularly, periodically alternating layers (hyperfine structure elements) and/or doping patterns are produced simultaneously with deposition of layers and/or with randomly selected doping gradients. In particular, the method is also suited for simultaneous deposition of layers lying laterally side-by-side or of laterally side-by-side differing dopings of a layer being deposited. In the context of doping, the radiation damage known from implantation is avoided.


Find Patent Forward Citations

Loading…