Johannesburg, South Africa

Adolf G Lutsch

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Adolf G Lutsch. Retrieved from https://idiyas.com/inventor/adolf-g-lutsch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Adolf G. Lutsch

Introduction

Adolf G. Lutsch is a notable inventor based in Johannesburg, South Africa. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in the manufacturing of semiconductor components.

Latest Patents

Lutsch holds a patent for a "Method for light-induced photolytic deposition simultaneously." This method allows for the manufacturing of semiconductor components with multiple layers. It enables the simultaneous production of periodically alternating layers and doping patterns. The technique also facilitates the deposition of layers that are laterally side-by-side, avoiding the radiation damage typically associated with implantation.

Career Highlights

Lutsch is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to explore and develop cutting-edge technologies in the semiconductor industry. His innovative approach has contributed to the advancement of manufacturing processes.

Collaborations

Lutsch has collaborated with Eberhard F. Krimmel, further enhancing the scope of his work in semiconductor technology.

Conclusion

Adolf G. Lutsch's contributions to semiconductor technology through his innovative patent demonstrate his significant role in the field. His work continues to influence advancements in manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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