Beijing, China

Dongqing Zou

This inventor holds 13 USPTO granted patents and 2 published patent applications. Top assignees: Beihang University, Samsung Electronics Co., Ltd., Beijing Samsung Telecom R&d Center. Active years: 2015-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dongqing Zou. Retrieved from https://idiyas.com/inventor/dongqing-zou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2015-2020

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13 patents (USPTO):Explore Patents

Title: The Innovative Journey of Dongqing Zou

Introduction: Dongqing Zou, a pioneering inventor hailing from Beijing, China, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Dongqing Zou's latest patents showcase his commitment to innovation, with a focus on advancements in artificial intelligence, renewable energy, and sustainable technologies.

Career Highlights: Throughout his illustrious career, Dongqing Zou has been at the forefront of technological innovation, leading research teams and spearheading projects that have revolutionized various industries. His expertise in patent law has also been instrumental in protecting his inventions and ensuring their impact is felt globally.

Collaborations: Dongqing Zou has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have been crucial in bridging the gap between academia and industry, resulting in the successful commercialization of his patented technologies.

Conclusion: Dongqing Zou's relentless pursuit of innovation and his dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor. His impact on the world of patents and inventions is undeniable, and his legacy will continue to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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