Dongmin Chen

USPTO Granted Patents = 49 (Patent Applications = 2)

Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 257(Granted Patents)

Location History:

Sunnyvale, CA (US) (2006)
Belmont, MA (US) (2006 - 2007)
Perth, AU (2013 - 2014)
Saratoga, CA (US) (2007 - 2017)
Fremont, CA (US) (2014 - 2018)

Company Filing History:

Years Active: 2006-2018

where 'Filed Patents' based on already Granted Patents

49 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10003020 - Heterojunction oxide non-volatile memory device (2018-06-19),

2. 9634247 - Complementary metal oxide heterojunction memory devices and methods related thereto (2017-04-25),

3. 9520559 - Heterojunction oxide non-volatile memory device (2016-12-13),

4. 9293201 - Heterojunction oxide non-volatile memory devices (2016-03-22),

5. 9006878 - Method and device for wafer scale packaging of optical devices using a scribe and break process (2015-04-14),

6. 8709891 - Method and system for utilizing Perovskite material for charge storage and as a dielectric (2014-04-29),

7. 8698120 - Heterojunction oxide non-volatile memory device (2014-04-15),

8. 8530259 - Method and structure for forming a gyroscope and accelerometer (2013-09-10),

9. 8530258 - Method and apparatus for MEMS oscillator (2013-09-10),

10. 8424343 - Laser processing of glass frit for sealing applications (2013-04-23),

11. 8378345 - Heterojunction oxide non-volatile memory device (2013-02-19),

12. 8361331 - MEMS mirror system for laser printing applications (2013-01-29),

13. 8288851 - Method and system for hermetically sealing packages for optics (2012-10-16),

14. 8247879 - Micromechanical device with microfluidic lubricant channel (2012-08-21),

15. 8207004 - Method and structure for forming a gyroscope and accelerometer (2012-06-26),

Title: The Innovative Contributions of Dongmin Chen

Introduction

Dongmin Chen, based in Saratoga, CA, is a prominent inventor known for his significant contributions to the field of memory devices. With an impressive portfolio, he holds a total of 49 patents, showcasing his innovative spirit and dedication to advancing technology.

Latest Patents

Among his latest inventions are two notable patents concerning non-volatile memory devices. The first patent describes a heterojunction oxide non-volatile memory device. This innovative memory device incorporates a first metal layer and a first metal oxide layer, demonstrating a unique construction that optimizes performance based on Gibbs free energy principles. The second patent focuses on complementary metal oxide heterojunction memory devices. It details a resistive memory device that manages oxygen vacancy or ion concentrations within metal oxide layers, ensuring robust memory operation and reliability.

Career Highlights

Throughout his career, Dongmin Chen has worked with leading companies in the technology industry, including Miradia Inc. and 4D-S Pty, Ltd. His role in these organizations has been pivotal in shaping the development of advanced memory technologies.

Collaborations

Dongmin has collaborated with talented individuals in his field, notably his coworkers Xiao Charles Yang and Fulin Xiong. These partnerships have fostered a collaborative environment that encourages innovative thinking and the exploration of new ideas.

Conclusion

In summary, Dongmin Chen's contributions to the field of memory device technology are commendable. With a wealth of patents and a collaborative spirit, he continues to push the boundaries of innovation, promising a brighter future in the realm of technology.

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