The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Dec. 02, 2016
Applicant:
4d-s Pty, Ltd, Perth, AU;
Inventor:
Dongmin Chen, Fremont, CA (US);
Assignee:
4D-S PTY, LTD, Perth, AU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); G11C 11/5685 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1608 (2013.01); H01L 45/1625 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01);
Abstract
A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer.