San Jose, CA, United States of America

Dong-Il Moon

This inventor holds 5 USPTO granted patents and 2 published patent applications. Top assignee: Sandisk Technologies Inc.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong-Il Moon. Retrieved from https://idiyas.com/inventor/dong-il-moon-bwgdxmfc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 80.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2024-2026

Loading Chart...
5 patents (USPTO):Explore Patents

Title: Innovations of Dong-Il Moon in NAND Memory Technology

Introduction

Dong-Il Moon is a prominent inventor based in San Jose, CA, known for his significant contributions to NAND memory technology. With a total of three patents to his name, he has made strides in enhancing the efficiency and performance of memory devices.

Latest Patents

One of his latest patents focuses on "NAND memory with different pass voltage ramp rates for binary and multi-state memory." This innovation aims to reduce current spikes in NAND memory dies by utilizing varying ramp rates for the pass voltage applied to unselected word lines during programming operations. The ramp rates are determined based on whether data is stored in a multi-level cell (MLC) format or a single-level cell (SLC) format. Additionally, he has developed a patent titled "Temperature-dependent word line voltage and discharge rate for refresh read of non-volatile memory." This patent describes a memory apparatus that adjusts the discharge voltage and ready voltage based on the temperature of the memory apparatus, thereby improving the reliability of data retention.

Career Highlights

Dong-Il Moon has established himself as a key figure in the field of memory technology through his innovative patents. His work at Sandisk Technologies Inc. has positioned him at the forefront of advancements in NAND memory solutions. His expertise in device characterization and voltage management has contributed to the development of more efficient memory systems.

Collaborations

Throughout

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…