The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Dec. 11, 2024
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Chengqing Hu, Milpitas, CA (US);

Dong-Il Moon, San Jose, CA (US);

Henry Chin, Fremont, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/28 (2013.01);
Abstract

The memory device includes a memory block that includes memory cells that are arranged in word lines and memory holes with varying diameters. The word lines are grouped into first and second groups based on memory hole diameter. Circuitry is configured to determine if the selected word line is in the first group or the second group. In response to the selected word line being in the first zone, the circuitry is configured to perform a memory operation using a first set of reference voltages. In response to the selected word line being in the second group, the circuitry is configured to perform the memory operation using a second set of reference voltages. The first and second sets of reference voltages are different for a plurality of data states and are similar for at least one data state at a highest threshold voltage range.


Find Patent Forward Citations

Hu, Chengqing. (2026). Verify and read control techniques for memory devices (U.S. Patent No. 12763158). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12763158

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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