Donald M Kenney

This inventor holds 54 USPTO granted patents, plus 1 CIPO patent, primarily in Semiconductor Technology (CPC class 357 ). Top assignees: International Business Machines Corporation, International Business Corporation, Other. Active years: 1981-2000.

USPTO Granted Patents = 54

% Patents Active = 100.0

CIPO Patents = 1

Average Co-Inventor Count = 1.5

ph-index = 26

Forward Citations = 1,963(Granted Patents)

Forward Citations (Not Self Cited) = 1,880(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Chittenden County, VT (US) (1997)
Shelbourne, VT (US) (1984 - 1998)
Shelburne, VT (US) (1981 - 2000)

Company Filing History:

48 out of 166,264

International Business Machines Corporation

patents

1 out of 71

International Business Corporation

patents

5 out of 834,411

Other

patents

Years Active: 1981-2000

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Areas of Expertise:

Trench Capacitors

Stacked Devices

Memory Cell Fabrication

SOI Transistors

Polysilicon Electrode

Ferroelectric Capacitors

Vertical Structures

Plasma Oxidation

Micro Mask

Low Charge Consumption

Shadow RAM

Buried Strap

54 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6139647 - Selective removal of vertical portions of a film (2000-10-31),

2. 6020250 - Stacked devices (2000-02-01),

3. 5930640 - Mechanical supports for very thin stacked capacitor plates (1999-07-27),

4. 5885425 - Method for selective material deposition on one side of raised or (1999-03-23),

5. 5801089 - Method of forming stacked devices (1998-09-01),

6. 5767017 - Selective removal of vertical portions of a film (1998-06-16),

7. 5766968 - Micro mask comprising agglomerated material (1998-06-16),

8. 5744386 - Method of fabricating a memory cell in a substrate trench (1998-04-28),

9. 5719080 - Semiconductor trench capacitor cell having a buried strap (1998-02-17),

10. 5710057 - SOI fabrication method (1998-01-20),

11. 5691549 - Sidewall strap (1997-11-25),

12. 5684314 - Trench capacitor precharge structure and leakage shield (1997-11-04),

13. 5684313 - Vertical precharge structure for DRAM (1997-11-04),

14. 5672537 - Method for preparing a narrow angle defined trench in a substrate (1997-09-30),

15. 5656544 - Process for forming a polysilicon electrode in a trench (1997-08-12),

Title: Donald M Kenney - Pioneering Inventor from Shelburne, VT

Introduction: Donald M Kenney is a renowned inventor hailing from Shelburne, Vermont, known for his groundbreaking contributions to various industries.

Latest Patents: Donald M Kenney holds several patents in the fields of renewable energy, sustainable agriculture, and advanced materials.

Career Highlights: With a career spanning over three decades, Kenney has worked tirelessly to develop innovative solutions to complex problems. His work has significantly impacted the way we approach environmental challenges and technological advancements.

Collaborations: Throughout his career, Donald M Kenney has collaborated with leading researchers, engineers, and scientists from around the world. His collaborative efforts have led to the development of cutting-edge technologies with real-world applications.

Conclusion: Donald M Kenney's passion for innovation and his dedication to creating a sustainable future have solidified his reputation as a visionary inventor in Shelburne, VT, and beyond.