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For the Inventor, By the Inventor

Shelburne, VT, United States of America

Donald M Kenney

This inventor holds 54 USPTO granted patents, plus 1 CIPO patent, primarily in Semiconductor Technology (CPC class 357 ). Top assignees: International Business Machines Corporation, International Business Corporation, Other. Active years: 1981-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donald M Kenney. Retrieved from https://idiyas.com/inventor/donald-m-kenney

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 54

% Patents Active = 100.0


Average Co-Inventor Count = 1.5

ph-index = 26

Forward Citations = 1,963(Granted Patents)

Forward Citations (Not Self Cited) = 1,880(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Chittenden County, VT (US) (1997)
  • Shelbourne, VT (US) (1984 - 1998)
  • Shelburne, VT (US) (1981 - 2000)

Company Filing History:

goldMedal48 out of 166,425 
 
International Business Machines Corporation
 patents
silverMedal1 out of 71 
 
International Business Corporation
 patents
bronzeMedal5 out of 834,601 
Other
 patents

Years Active: 1981-2000

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Areas of Expertise:
Trench Capacitors
Stacked Devices
Memory Cell Fabrication
SOI Transistors
Polysilicon Electrode
Ferroelectric Capacitors
Vertical Structures
Plasma Oxidation
Micro Mask
Low Charge Consumption
Shadow RAM
Buried Strap
54 patents (USPTO):Explore Patents
1. 6139647 - Selective removal of vertical portions of a film (2000-10-31),
2. 6020250 - Stacked devices (2000-02-01),
3. 5930640 - Mechanical supports for very thin stacked capacitor plates (1999-07-27),
4. 5885425 - Method for selective material deposition on one side of raised or (1999-03-23),
5. 5801089 - Method of forming stacked devices (1998-09-01),
6. 5767017 - Selective removal of vertical portions of a film (1998-06-16),
7. 5766968 - Micro mask comprising agglomerated material (1998-06-16),
8. 5744386 - Method of fabricating a memory cell in a substrate trench (1998-04-28),
9. 5719080 - Semiconductor trench capacitor cell having a buried strap (1998-02-17),
10. 5710057 - SOI fabrication method (1998-01-20),
11. 5691549 - Sidewall strap (1997-11-25),
12. 5684314 - Trench capacitor precharge structure and leakage shield (1997-11-04),
13. 5684313 - Vertical precharge structure for DRAM (1997-11-04),
14. 5672537 - Method for preparing a narrow angle defined trench in a substrate (1997-09-30),
15. 5656544 - Process for forming a polysilicon electrode in a trench (1997-08-12),

Title: Donald M Kenney - Pioneering Inventor from Shelburne, VT

Introduction: Donald M Kenney is a renowned inventor hailing from Shelburne, Vermont, known for his groundbreaking contributions to various industries.

Latest Patents: Donald M Kenney holds several patents in the fields of renewable energy, sustainable agriculture, and advanced materials.

Career Highlights: With a career spanning over three decades, Kenney has worked tirelessly to develop innovative solutions to complex problems. His work has significantly impacted the way we approach environmental challenges and technological advancements.

Collaborations: Throughout his career, Donald M Kenney has collaborated with leading researchers, engineers, and scientists from around the world. His collaborative efforts have led to the development of cutting-edge technologies with real-world applications.

Conclusion: Donald M Kenney's passion for innovation and his dedication to creating a sustainable future have solidified his reputation as a visionary inventor in Shelburne, VT, and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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