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Shelburne, VT, United States of America

Donald M Kenney

USPTO Granted Patents = 52

CIPO Patents = 1

Average Co-Inventor Count = 1.5

ph-index = 25

Forward Citations = 1,921(Granted Patents)

Forward Citations (Not Self Cited) = 1,880(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Chittenden County, VT (US) (1997)
Shelburne, VT (US) (1981 - 2000)

Company Filing History:

46 out of 164,197

International Business Machines Corporation

International Business Corporation

5 out of 832,843

Other

patents

Years Active: 1981-2000

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Areas of Expertise:

Vertical Epitaxial SOI Transistor

Trench Capacitor

Memory Cell Fabrication

Low Temperature Plasma Oxidation

Dynamic RAM Cell

Porous Silicon Structures

Charge Amplifying Memory Cell

Stacked Devices

Selective Material Deposition

Micro Mask Technology

High Density Memory

Single Transistor Driver Circuit

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6139647 - Selective removal of vertical portions of a film (2000-10-31),

2. 6020250 - Stacked devices (2000-02-01),

3. 5930640 - Mechanical supports for very thin stacked capacitor plates (1999-07-27),

4. 5885425 - Method for selective material deposition on one side of raised or (1999-03-23),

5. 5767017 - Selective removal of vertical portions of a film (1998-06-16),

6. 5766968 - Micro mask comprising agglomerated material (1998-06-16),

7. 5744386 - Method of fabricating a memory cell in a substrate trench (1998-04-28),

8. 5719080 - Semiconductor trench capacitor cell having a buried strap (1998-02-17),

9. 5710057 - SOI fabrication method (1998-01-20),

10. 5691549 - Sidewall strap (1997-11-25),

11. 5684314 - Trench capacitor precharge structure and leakage shield (1997-11-04),

12. 5684313 - Vertical precharge structure for DRAM (1997-11-04),

13. 5672537 - Method for preparing a narrow angle defined trench in a substrate (1997-09-30),

14. 5656544 - Process for forming a polysilicon electrode in a trench (1997-08-12),

15. 5641694 - Method of fabricating vertical epitaxial SOI transistor (1997-06-24),

Title: Donald M Kenney - Pioneering Inventor from Shelburne, VT

Introduction: Donald M Kenney is a renowned inventor hailing from Shelburne, Vermont, known for his groundbreaking contributions to various industries.

Latest Patents: Donald M Kenney holds several patents in the fields of renewable energy, sustainable agriculture, and advanced materials.

Career Highlights: With a career spanning over three decades, Kenney has worked tirelessly to develop innovative solutions to complex problems. His work has significantly impacted the way we approach environmental challenges and technological advancements.

Collaborations: Throughout his career, Donald M Kenney has collaborated with leading researchers, engineers, and scientists from around the world. His collaborative efforts have led to the development of cutting-edge technologies with real-world applications.

Conclusion: Donald M Kenney's passion for innovation and his dedication to creating a sustainable future have solidified his reputation as a visionary inventor in Shelburne, VT, and beyond.

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