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For the Inventor, By the Inventor

Boise, ID, United States of America

Donald L Yates

USPTO Granted Patents = 69 


Average Co-Inventor Count = 1.4

ph-index = 15

Forward Citations = 572(Granted Patents)

Forward Citations (Not Self Cited) = 421(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tampa, FL (US) (1980)
  • Salisbury, NC (US) (1999)
  • Boise, ID (US) (1999 - 2014)
  • Meridian, ID (US) (2013 - 2015)

Company Filing History:

goldMedal67 out of 37,972 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 832,843 
Other
 patents

Years Active: 1980-2015

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Areas of Expertise:
Semiconductor Fabrication
Integrated Circuitry
Low-K Dielectric Films
Magnetic Random Access Memory
Electrode Surface Area Enhancement
Wafer Cleaning Techniques
Localized Masking
Etching Compositions
Surface Planarity Improvement
Chemical Mechanical Polishing
Processing Byproducts Removal
Water Spotting Reduction
69 patents (USPTO):Explore Patents
1. 8969217 - Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates (2015-03-03),
2. 8951433 - Compositions for use in semiconductor devices (2015-02-10),
3. 8632692 - Compositions for use in semiconductor devices (2014-01-21),
4. 8565016 - System having improved surface planarity for bit material deposition (2013-10-22),
5. 8492288 - Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates (2013-07-23),
6. 8454760 - Wafer cleaning with immersed stream or spray nozzle (2013-06-04),
7. 8142673 - Compositions for dissolution of low-k dielectric films, and methods of use (2012-03-27),
8. 7868369 - Localized masking for semiconductor structure development (2011-01-11),
9. 7759053 - Methods of fabricating integrated circuitry (2010-07-20),
10. 7642157 - Method for enhancing electrode surface area in DRAM cell capacitors (2010-01-05),
11. 7582570 - Compositions for removal of processing byproducts and method for using same (2009-09-01),
12. 7573121 - Method for enhancing electrode surface area in DRAM cell capacitors (2009-08-11),
13. 7521373 - Compositions for dissolution of low-k dielectric films, and methods of use (2009-04-21),
14. 7482176 - Etch mask and method of forming a magnetic random access memory structure (2009-01-27),
15. 7468534 - Localized masking for semiconductor structure development (2008-12-23),

Title: The Innovative Journey of Donald L Yates

Introduction: Donald L Yates, a distinguished inventor hailing from Boise, ID, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Donald L Yates holds several patents in various fields, including telecommunications, renewable energy, and medical devices. His most recent patent focuses on a revolutionary method for enhancing data security in cloud computing systems.

Career Highlights: With a career spanning over two decades, Donald L Yates has worked for renowned tech companies, leading research institutions, and universities. His expertise in developing cutting-edge solutions has earned him recognition as a pioneer in the industry.

Collaborations: Throughout his career, Donald L Yates has collaborated with top engineers, scientists, and researchers to bring his ideas to life. His ability to work in multidisciplinary teams has resulted in the successful implementation of several innovative projects.

Conclusion: Donald L Yates continues to push the boundaries of technology with his inventive spirit and passion for creating solutions that make a difference in the world. His legacy as an inventor remains an inspiration for future generations in the field of innovation.

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