Dingkai Guo

Title: The Innovations of Dingkai Guo

Introduction

Dingkai Guo is a notable inventor based in Danbury, CT (US). He has made significant contributions to the field of materials science, particularly in the development of advanced dielectric materials. His work focuses on enhancing the performance of microelectronic devices through innovative processes.

Latest Patents

Dingkai Guo holds a patent for "ALD processes for low leakage current and low equivalent oxide thickness BiTaO films." This invention describes a high dielectric constant (k ≥ 40), low leakage current (≤ 10 A/cm² at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide. The patent outlines the use of two or more compatible metals, including bismuth, tantalum, niobium, and others, to create a stable metal oxide. The atomic layer deposition process disclosed in the patent allows for the formation of these metal oxides, which are essential for applications in DRAM and other microelectronic devices.

Career Highlights

Dingkai Guo is currently employed at Entegris, Inc., where he continues to push the boundaries of innovation in materials science. His expertise in atomic layer deposition and dielectric materials has positioned him as a key player in the industry.

Collaborations

Dingkai has collaborated with several esteemed colleagues, including Bryan Clark Hendrix and Philip S H Chen. These partnerships have fostered a collaborative environment that enhances the research and development of new technologies.

Conclusion

Dingkai Guo's contributions to the field of materials science and his innovative patent demonstrate his commitment to advancing technology in microelectronics. His work continues to influence the development of high-performance materials that are crucial for modern electronic devices.