The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Feb. 05, 2014
Entegris, Inc., Billerica, MA (US);
Atmi Korea Co., Ltd, Suwon, KR;
Bryan C. Hendrix, Danbury, CT (US);
Philip S. H. Chen, Bethel, CT (US);
Weimin Li, New Milford, CT (US);
Woosung Jang, Gyeong Gi-Do, KR;
Dingkai Guo, Danbury, CT (US);
Entegris, Inc., Billerica, MA (US);
Abstract
A high dielectric constant (k≥40), low leakage current (≤10A/cmat 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.