Woosung Jang

Title: Woosung Jang: Innovator in Metal Oxide Dielectrics

Introduction

Woosung Jang is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of materials science, particularly in the development of high dielectric constant metal oxides. His work is essential for advancing microelectronic devices.

Latest Patents

Woosung Jang holds a patent for "ALD processes for low leakage current and low equivalent oxide thickness BiTaO films." This invention describes a high dielectric constant non-crystalline metal oxide that exhibits low leakage current and low equivalent oxide thickness. The metal oxide is composed of two or more compatible metals, including bismuth, tantalum, niobium, and others. The atomic layer deposition process disclosed in the patent allows for the creation of a dielectric material that is particularly useful in DRAM and other microelectronic applications.

Career Highlights

Woosung Jang is currently employed at Entegris, Inc., where he continues to innovate in the field of materials for electronic devices. His expertise in atomic layer deposition processes has positioned him as a key player in the development of advanced dielectric materials.

Collaborations

Throughout his career, Woosung Jang has collaborated with esteemed colleagues, including Bryan Clark Hendrix and Philip S H Chen. These collaborations have further enhanced his research and development efforts in the field of microelectronics.

Conclusion

Woosung Jang's contributions to the field of metal oxide dielectrics are invaluable. His innovative patent and ongoing work at Entegris, Inc. highlight his role as a leading inventor in materials science.