Entegris, Inc.

Dingkai Guo

Bryan Clark Hendrix

Philip S H Chen

Weimin Li

Woosung Jang

A high dielectric constant (k&#x2265;40), low leakage current (&#x2264;10A/cmat 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

Growing community of inventors

Danbury, CT, United States of America

Dingkai Guo