Austin, TX, United States of America

Di-Houng Lee

This inventor holds 3 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2006-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Di-Houng Lee. Retrieved from https://idiyas.com/inventor/di-houng-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • Kaohsiung, TW (2006)
  • Austin, TX (US) (2008 - 2010)

Company Filing History:


Years Active: 2006-2010

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Di-Houng Lee: Innovator in Semiconductor Technology

Introduction

Di-Houng Lee is a prominent inventor based in Austin, TX, known for his contributions to semiconductor technology. He holds a total of 3 patents that focus on improving the performance and reliability of semiconductor devices. His work has significantly impacted the field, particularly in the area of metal salicide formation.

Latest Patents

One of his latest patents is titled "Metal salicide formation having nitride liner to reduce silicide stringer and encroachment." This patent discloses various embodiments of techniques aimed at preventing silicide stringer or encroachment formation during metal salicide formation in semiconductor devices. The technique involves depositing a protective layer, such as a nitride or other dielectric layer, over areas of the semiconductor device where metal silicide formation is not desired. This protective layer helps to prevent silicon particles from reacting with metal deposited to form metal silicide in certain areas, thereby reducing or eliminating silicide stringers or encroachment in undesired areas.

Another significant patent is "Manufacturing method for semiconductor device to mitigate short channel effects." This patent describes a method of manufacturing a plurality of MOS transistors, which includes forming gate structures in first and second regions on a substrate. The method also involves implanting dopants at specific angles to form halo regions under the gate structures, enhancing the performance of the transistors.

Career Highlights

Di-Houng Lee is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to innovate and develop new technologies in semiconductor manufacturing. His expertise in the field has made him a valuable asset to the company and the industry as a whole.

Collaborations

Throughout his career, Di-Houng has collaborated with notable colleagues, including Kuang-Hsin Chen and Chung-Te Lin. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Di-Houng Lee's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Ltd. highlight his role as an influential inventor in the field. His innovative techniques continue to shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…