The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Jan. 31, 2007
Tan-chen Lee, Panchiao, TW;
Chung-te Lin, Hsinchu, TW;
Kuang-hsin Chen, Jung-Li, TW;
Chi-hsi Wu, Hsinchu, TW;
Di-houng Lee, Austin, TX (US);
Cheng-hung Chang, Hsinchu, TW;
Tan-Chen Lee, Panchiao, TW;
Chung-Te Lin, Hsinchu, TW;
Kuang-Hsin Chen, Jung-Li, TW;
Chi-Hsi Wu, Hsinchu, TW;
Di-Houng Lee, Austin, TX (US);
Cheng-Hung Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Disclosed herein are various embodiments of techniques for preventing silicide stringer or encroachment formation during metal salicide formation in semiconductor devices. The disclosed technique involves depositing a protective layer, such as a nitride or other dielectric layer, over areas of the semiconductor device where metal silicide formation is not desired because such formation detrimentally affects device performance. For example, silicon particles that may remain in device features that are formed through silicon oxidation, such as under the gate sidewall spacers and proximate to the perimeter of shallow trench isolation structures, are protected from reacting with metal deposited to form metal silicide in certain areas of the device. As a result, silicide stringers or encroachment in undesired areas is reduced or eliminated by the protective layer.