Dharam Pal Gosain

This inventor holds 41 USPTO granted patents, primarily in Thin Film Transistors. Top assignees: Sony Corporation, Japan Display West Inc.. Active years: 1995-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dharam Pal Gosain. Retrieved from https://idiyas.com/inventor/dharam-pal-gosain

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41

% Patents Active = 63.4

Average Co-Inventor Count = 3.8

ph-index = 14

Forward Citations = 792(Granted Patents)

Location History:

Kanagawa, JP (1995 - 2006)
Tokyo, JP (2006 - 2013)

Company Filing History:

Japan Display West Inc.

patents

Years Active: 1995-2013

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Areas of Expertise:

Thin Film Transistor

Semiconductor Device

Memory Element

Optical Sensor

Quantum Wires

Plastic Substrate

Doping Semiconductor

Manufacturing Method

Field Electron Emission

Crystalline Semiconductor

Imaging Device

Display Manufacturing

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8619208 - Display and method for manufacturing display (2013-12-31),

2. 8618545 - Thin film transistor and display (2013-12-31),

3. 8194469 - Optical sensor element, imaging device, electronic equipment and memory element (2012-06-05),

4. 8134154 - Thin film transistor and display (2012-03-13),

5. 8115188 - Memory element and display device (2012-02-14),

6. 7892063 - Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit (2011-02-22),

7. 7828620 - Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit (2010-11-09),

8. 7538014 - Method of producing crystalline semiconductor material and method of fabricating semiconductor device (2009-05-26),

9. 7169690 - Method of producing crystalline semiconductor material and method of fabricating semiconductor device (2007-01-30),

10. 7144793 - Method of producing crystalline semiconductor material and method of fabricating semiconductor device (2006-12-05),

11. 6984552 - Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element (2006-01-10),

12. 6953754 - Functional device and method of manufacturing the same (2005-10-11),

13. 6821797 - Semiconductor device and its manufacturing method (2004-11-23),

14. 6806169 - Semiconductor device manufacturing method (2004-10-19),

15. 6794673 - Plastic substrate for a semiconductor thin film (2004-09-21),

Title: Dharam Pal Gosain - Pioneering Inventor from Tokyo

Introduction: Dharam Pal Gosain is a renowned inventor based in Tokyo, Japan, known for his groundbreaking contributions to various fields of technology and innovation.

Latest Patents: Dharam Pal Gosain holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of scientific advancement.

Career Highlights: With a career spanning over three decades, Gosain has worked with leading research institutions and multinational corporations, playing a pivotal role in the development of cutting-edge solutions that have revolutionized industries worldwide.

Collaborations: Throughout his career, Dharam Pal Gosain has collaborated with top universities, tech companies, and government agencies, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Dharam Pal Gosain's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his reputation as a visionary inventor whose work continues to inspire future generations of innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]