Sony Corporation

Japan Display West Inc.

Dharam Pal Gosain

Setsuo Usui

Jonathan Westwater

Akio Machida

Miyako Nakagoe

Takashi Noguchi

Kazumasa Nomoto

Tsutomu Tanaka

Naoki Sano

Toshiyuki Sameshima

Masaki Hara

Junichi Sato

Kazushi Nakano

Toshio Fujino

Masashi Shiraishi

Shigeaki A Wachi

Masafumi Ata

Makoto Takatoku

Narihiro Morosawa

Koji Kadono

Hisashi Kajiura

Ryuichiro Maruyama

Houjin Huang

Yoshiharu Nakajima

Takeshi Matsushita

Yoshifumi Mori

Noriyuki Kawashima

Kenichi Taira

Kunio Hane

In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layerfor constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layerfor constituting the light sensor elements are provided over a gate insulating filmon a glass substrateto be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layeris formed to be thicker than the channel layer, and/or the photoelectric conversion layeris formed of a material different from the material for the channel layer, whereby the light absorption coefficient of the photoelectric conversion layeris made to be higher than that of the channel layer

Display and method for manufacturing display

A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.

Thin film transistor and display

An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.

Optical sensor element, imaging device, electronic equipment and memory element

Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.

Memory element and display device

A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate () made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (). The heat distribution () is formed, for example, through diffracting an energy beam () by a diffraction grating (). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.

Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Method of producing crystalline semiconductor material and method of fabricating semiconductor device

A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.

Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element

The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer () is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate () to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate () and the functional layer () is shut off by an organic polymer layer () lower in thermal expansion coefficient than the substrate (), thereby causing no cracks nor separations in the functional layer (). The organic polymer layer () is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate () and the functional layer () will permit a more powerful laser irradiation.

Functional device and method of manufacturing the same

For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.

Semiconductor device and its manufacturing method

In a manufacturing method of a thin-film transistor having a polycrystalline Si film as its active region, an amorphous-phase Si film is first formed, and pulse laser beams are irradiated to crystallize the Si film and thereby form a polycrystalline Si film. After electrodes are made on a source region and a drain region, a SiN film as a hydrogen-containing film is formed on the entire surface. By irradiating pulse laser beams to heat the SiN film, hydrogen in the SiN film is diffused into the polycrystalline Si film to hydrogenate it and reduce the trap density along crystal grain boundaries in the polycrystalline Si film.

Semiconductor device manufacturing method

A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls ( ) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer ( ), dopant ions ( ) are adsorbed on the surface of the semiconductor layer ( ) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer ( ) having the formed mask to introduce the dopant ions into the semiconductor layer ( ). In the lower part of the mask such sidewalls ( ), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.

Growing community of inventors

Tokyo, Japan

Dharam Pal Gosain