The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Dec. 07, 2001
Applicants:
Akio Machida, Kanagawa, JP;
Setsuo Usui, Kanagawa, JP;
Dharam Pal Gosain, Kanagawa, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.