The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Sep. 18, 2008
Dharam Pal Gosain, Tokyo, JP;
Tsutomu Tanaka, Kanagawa, JP;
Makoto Takatoku, Kanagawa, JP;
Japan Display West Inc., Aichi, JP;
Abstract
In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layerfor constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layerfor constituting the light sensor elements are provided over a gate insulating filmon a glass substrateto be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layeris formed to be thicker than the channel layer, and/or the photoelectric conversion layeris formed of a material different from the material for the channel layer, whereby the light absorption coefficient of the photoelectric conversion layeris made to be higher than that of the channel layer