San Jose, CA, United States of America

Davide Guarisco


Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 126(Granted Patents)


Location History:

  • Palo Alto, CA (US) (2004)
  • San Jose, CA (US) (2009 - 2020)

Company Filing History:


Years Active: 2004-2020

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9 patents (USPTO):Explore Patents

Title: The Innovative Mind of Davide Guarisco

Introduction

Davide Guarisco, an inventive force based in San Jose, CA, has made significant contributions to the field of magnetic memory technology. With an impressive portfolio of nine patents, Guarisco’s work reflects a deep understanding of fabrication methods and memory device design.

Latest Patents

Guarisco’s latest patents focus on advancing three-dimensional magnetic memory devices. One notable patent describes methods of fabricating such devices, which include several detailed steps: providing a dielectric substrate with a metallic core, depositing a ferromagnetic layer, and creating a magnetic tunnel junction with cylindrical layers. These innovations hold the potential to enhance data storage efficiency and performance, significantly impacting the electronics industry.

Career Highlights

Throughout his career, Davide Guarisco has held pivotal roles at leading technology companies such as Western Digital Technologies, Inc. and Spin Memory, Inc. His expertise in the field has enabled him to drive projects that push the envelope in magnetic memory development.

Collaborations

Collaboration is fundamental to innovation, and Guarisco has worked alongside esteemed colleagues like Marcin Gajek and Eric Ryan. These partnerships have enabled the fusion of ideas and expertise, further enhancing the advancement of magnetic memory technologies.

Conclusion

With his wealth of knowledge and inventive spirit, Davide Guarisco continues to contribute remarkable advancements to the field of engineering and technology. His patents not only showcase his capabilities as an inventor but also highlight his role in shaping the future of magnetic memory devices.

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